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首页> 外文期刊>Apoptosis: An international journal on programmed cell death >Nanosecond pulsed electric fields modulate the expression of Fas/ CD95 death receptor pathway regulators in U937 and Jurkat Cells
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Nanosecond pulsed electric fields modulate the expression of Fas/ CD95 death receptor pathway regulators in U937 and Jurkat Cells

机译:纳秒脉冲电场调节U937和Jurkat细胞中Fas / CD95死亡受体途径调节剂的表达

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摘要

In this publication, we demonstrate that exposure of Jurkat and U937 cells to nanosecond pulsed electrical fields (nsPEF) can modulate the extrinsic-mediated apoptotic pathway via the Fas/CD95 death receptor. An inherent difference in survival between these two cell lines in response to 10 ns exposures has been previously reported (Jurkat being more sensitive to nsPEF than U937), but the reason for this sensitivity difference remains unknown. We found that exposure of each cell line to 100, 10 ns pulses at 50 kV/cm caused a marked increase in expression of cFLIP (extrinsic apoptosis inhibitor) in U937 and FasL (extrinsic apoptosis activator) in Jurkat, respectively. Measurement of basal expression levels revealed an inherent difference between U937 cells, having a higher expression of cFLIP, and Jurkat cells, having a higher expression of FasL. From these data, we hypothesize that the sensitivity difference between the cells to nsPEF exposure may be directly related to expression of extrinsic apoptotic regulators. To validate this hypothesis, we used siRNA to knockdown cFLAR (coding for cFLIP protein) expression in U937, and FasL expression in Jurkat and challenged them to 100, 10 ns pulses at 150 kV/cm, a typical lethal dose. We observed that U937 survival was reduced nearly 60 % in the knockdown population while Jurkat survival improved ~40 %. These findings support the hypothesis that cell survival following 10 ns pulse exposures depends on extrinsic apoptotic regulators. Interestingly, pretreatment of U937 with a 100-pulse, 50 kV/cm exposure (to amplify cFLAR expression) significantly reduced the lethality of a 150 kV/cm, 100-pulse exposure applied 24 h later. From these data, we conclude that the observed survival differences between cells, exposed to 10 ns pulsed electric fields, is due to inherent cell biochemistry rather than the biophysics of the exposure itself. Understanding cell sensitivity to nsPEF may provide researchers/clinicians with a predicable way to control or avoid unintended cell death during nsPEF exposure.
机译:在此出版物中,我们证明Jurkat和U937细胞暴露于纳秒脉冲电场(nsPEF)可以通过Fas / CD95死亡受体调节外在性介导的凋亡途径。先前已经报道了这两种细胞系在响应10 ns暴露后存活率的固有差异(Jurkat对nsPEF的敏感性高于U937),但这种敏感性差异的原因仍然未知。我们发现,每个细胞系在50 kV / cm的电压下分别受到100、10 ns脉冲的照射,分别导致U937中的cFLIP(外部细胞凋亡抑制剂)和Jurkat的FasL(外部细胞凋亡激活剂)表达显着增加。基础表达水平的测量揭示了在较高表达cFLIP的U937细胞与较高表达FasL的Jurkat细胞之间的固有差异。根据这些数据,我们假设细胞之间对nsPEF的敏感性差异可能与外在凋亡调节因子的表达直接相关。为了验证该假设,我们使用siRNA敲低了U937中的cFLAR(编码cFLIP蛋白)表达,以及Jurkat中的FasL表达,并以150 kV / cm(典型的致死剂量)对它们施加了100、10 ns脉冲的攻击。我们观察到,击倒人群中U937的生存率降低了近60%,而Jurkat的生存率提高了约40%。这些发现支持以下假设,即10 ns脉冲暴露后的细胞存活取决于外在的凋亡调节剂。有趣的是,以100脉冲,50 kV / cm的暴露量(以放大cFLAR表达)对U937进行预处理可以显着降低24小时后施加的150 kV / cm,100脉冲的暴露量。根据这些数据,我们得出结论,暴露于10 ns脉冲电场的细胞之间观察到的存活差异是由于固有的细胞生物化学而不是暴露本身的生物物理学造成的。了解细胞对nsPEF的敏感性可能为研究人员/临床医生提供控制或避免nsPEF暴露期间意外细胞死亡的可预测方法。

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