Quantitative comprehension the impact of X-light on current gain of lateral PNP bipolar transistor

摘要

Bias emission voltage and dose-dependent current gain are the key parameters to detect the physical performance of bipolar transistors. Firstly, the effect of X-light with energy 22.1 and 25.0 keV from Cd-109 on the current gain of lateral PNP bipolar transistors is measured. The substantial difference of current gain with the variation of bias and emission voltage is observed. Then, on basis of the outcomes of the nonlinear curve fitting approach, the relationship between bias voltage and emission-related current gain is successfully explained by using the model of combination Maxwell Boltzmann statistical with Bose-Einstein probability. The simulation results are in good agreement with the observed curves (current gain vs. voltage). The minimal correlation coefficient between experimental data and computed data is 0.998. In all cases considered, the mean relative error between the measured value and the model value is not more than 5.0%. Finally, the mathematical link between the parameters of current gain and voltage and the X-light dose is obtained. Therefore, using only one function, the current gain can be anticipated by the voltage and dose between bias and emission. The influence of X-light on the current gain of transverse PNP bipolar transistors is firstly discussed quantitatively.