ZnO quantum dot based thin films as promising electron transport layer: Influence of surface-to-volume ratio on the photoelectric properties

摘要

ZnO quantum dots (QDs) with average particle size of 4.4 nm were prepared using a low temperature processing solvothermal route. ZnO QD based thin films were then prepared from the ZnO QD based solution using spin coating technique and annealed at 250, 350 and 450 ?C. The average grain size and energy band gap of ZnO were respectively increased and decreased from 5.5 to 22.9 nm and 3.37 to 3.27 eV upon increasing the annealing temperature up to 450 ?C. The photoluminescence analysis showed that the as-coated ZnO film and ZnO film annealed at 250 ?C have high density of oxygen vacancies; these defects were reduced upon increasing the temperature to 350 and 450 ?C. The photoelectric properties of the films were strongly affected by the grain size and the defects present in the films. The photo-to-dark current ratio (PDCR) was decreased from 3723 to 371%, whereas the responsivity was increased from 1.25 to 218 mA/W with the increase of temperature to 450 ?C. Ascoated and 250 ?C-annealed films exhibited better photoresponse than others in terms of PDCR, rise time and fall time due to their larger surface-to-volume ratio, making them promising candidate as electron transport layer in perovskite solar cells.