X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces (vol 101, 107647, 2020)

Koh Donghyi; Hudnall Todd W.; Bielawski Christopher W.; Banerjee Sanjay K.; Brockman Justin; Kuhn Markus; King Sean W.

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X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces (vol 101, 107647, 2020)

机译：X射线光电子能谱对氧化铍 - 金刚石界面的价带偏移（Vol 101,107647,2020）的价光谱分辨率研究

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《Diamond and Related Materials》 |2021年第1期|共1页
作者
Koh Donghyi; Hudnall Todd W.; Bielawski Christopher W.; Banerjee Sanjay K.; Brockman Justin; Kuhn Markus; King Sean W.;
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作者单位

Univ Texas Austin Dept Elect &

Comp Engn Microelect Res Ctr 10100 Burnet Rd Austin TX 78758 USA;

Texas State Univ Dept Chem &

Biochem San Marcos TX 78666 USA;

Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan 44919 South Korea;

Univ Texas Austin Dept Elect &

Comp Engn Microelect Res Ctr 10100 Burnet Rd Austin TX 78758 USA;

Intel Corp Log Technol Dev Hillsboro OR 97124 USA;

Intel Corp Log Technol Dev Hillsboro OR 97124 USA;

Intel Corp Log Technol Dev Hillsboro OR 97124 USA;

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正文语种 eng
中图分类电热工业、高温制品工业;第Ⅳ族非金属元素及其无机化合物;人造宝石、合成宝石的生产;
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1. The Valence Band Offset of an Al0.17Ga0.83N/GaN Heterojunction Determined by X-Ray Photoelectron Spectroscopy [J] . WAN Xiao-Jia, WANG Xiao-Liang, XIAO Hong-Ling, 中国物理快报：英文版 . 2013,第005期
2. Measurement of GaN/Ge(001)Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy [J] . GUO Yan, LIU Xiang-Lin, SONG Hua-Ping, 中国物理快报：英文版 . 2010,第006期
3. Measurement of GaN/Ge（001） Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy [J] . GUO Yan, LIU Xiang-Lin, SONG Hua-Ping, 中国物理快报：英文版 . 2010,第006期
4. Investigation of Zn1-xCdxO films bandgap and Zn1-xCdxO/ZnO heterojunctions band offset by x-ray photoelectron spectroscopy [J] . Jie Chen, Xue-Min Wang, Ji-Cheng Zhang, 中国物理：英文版 . 2017,第008期
5. Measurement of ZnO/Al2O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy [J] . LEI Hong-Wen, ZHANG Hong, WANG Xue-Min, 中国物理快报：英文版 . 2013,第011期
6. X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces [J] . Koh D., Banerjee S. K., Brockman J., Diamond and Related Materials . 2020,第期

机译：X射线光电子能谱对氧化铍 - 金刚石界面的价带偏移的研究
7. Measurement of valence-band offset at native oxide/BaSi_2 interfaces by hard x-ray photoelectron spectroscopy [J] . Ryota Takabe, Weijie Du, Keita Ito, Journal of Applied Physics . 2016,第2期

机译：用硬X射线光电子能谱法测量天然氧化物/ BaSi_2界面的价带偏移
8. Valence band offset at the CdS/Cu2ZnSnS4 interface probed by x-ray photoelectron spectroscopy [J] . Santoni A., Biccari F., Malerba C., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第17期

机译：X射线光电子能谱探测CdS / Cu2ZnSnS4界面的价带偏移
9. Valence band offset at MoO3/CdTe interface probed by X-ray photoelectron spectroscopy [C] . Paudel N.R., Yan Y. . 2014

机译：X射线光电子能谱法探测MoO 3 / CdTe界面的价带偏移
10. Valence electronic structure of semiconductor quantum dot and wide band gap oxide interfaces by ultraviolet photoelectron spectroscopy. [D] . Timp, Brooke Andrea. 2009

机译：紫外光电子能谱分析半导体量子点和宽带隙氧化物界面的价电子结构。
11. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy [O] . Wei Wei, Zhixin Qin, Shunfei Fan, 2012

机译：X射线光电子能谱法测量β-Ga2O3/纤锌矿GaN异质结构的价带偏移
12. Measurement of valence-band offset at native oxide/BaSi2 interfaces by hard x-ray photoelectron spectroscopy [O] . Takabe Ryota, Du Weijie, Ito Keita, 2016

机译：用硬X射线光电子能谱法测量天然氧化物/ BaSi2界面处的价带偏移
13. Core Level and Valence Band X-ray Photoelectron Spectroscopy of Gold Oxide [R] . Aita, C. R., Tran, N. C. 1991

机译：金氧化物的核心水平和价带X射线光电子能谱

X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces (vol 101, 107647, 2020)

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