Design and simulation of RF-MEMS shunt switch for K-band applications

摘要

This paper presents the design and simulation of shunt type switch with meanders and perforations. The proposed switch is utilizing silicon nitride (Si3N4) as a dielectric material within the transmission line and the beam is considered as gold (Au), and it offers several benefits in terms of performance such as low spring constant, pull-in voltage, and also good S-parameters. The pull-in voltage is obtained as 4.6 V, the dielectric materials are utilized to improve the capacitance of the switch, which is having is 4.62 fF and 3.94 pF. The Electro-magnetic analysis is done by using the HFSS tool, the return and insertion of the proposed switch are maintained as - 44.69 dB and 0.415 dB at 22 GHz frequency. The isolation is observed at - 40.37 dB at 20 GHz frequency. The proposed device having good results at the 20-22 GHz frequency range. The proposed switch, which operates in the range of 1-25 GHz, gives good results when associated with other devices and is utilizing for K-band and wireless communication systems.