SiC Schottky barrier diode

摘要

Microchip Technology Inc.'s (Chandler, Ariz.) newly qualified 700 and 1200V SiC Schottky barrier diode (SBD) power devices provide electric vehicle (EV) system designers with solutions that meet stringent automotive quality standards across a wide range of voltage, current and package options. For EV power designers who need to increase system efficiency while maintaining high quality, Microchip's AEC-Q101-qualified devices maximize system reliability and ruggedness and enable stable and lasting application life. The devices' avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity. Microchip devices have demonstrated no degradation in performance, increasing the application life.