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首页> 外文期刊>Journal of Physics. Condensed Matter >Pressure-induced isostructural electronic topological transitions in 2H-MoTe2: x-ray diffraction and first-principles study
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Pressure-induced isostructural electronic topological transitions in 2H-MoTe2: x-ray diffraction and first-principles study

机译:2H-Mote2中的压力诱导的Isostrontucton电子拓扑转变:X射线衍射和第一原理研究

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摘要

Synchrotron x-ray diffraction measurements on powder 2H-MoTe2 (P6(3)/mmc) up to similar to 46 GPa have been performed along with first-principles based density functional theoretical analysis to probe the isostructural transition in low pressure regime and two electronic topological transitions (ETT) of Lifshitz-type in high pressure regime. The low pressure isostructural transition at similar to 7 GPa is associated with the lattice parameter ratio c/a anomaly and the change in the compressibility of individual layers. The pressure dependence of the volume by linearizing the Birch-Murnaghan equation of state as a function of Eulerian strain shows a clear change of the bulk modulus at the ETT pressure of similar to 20 GPa. The minimum of c/a ratio around 32 GPa is associated with the change in topology of electron pockets marked as second ETT of Lifshitz-type. We do not observe any structural transition up to the maximum applied pressure of similar to 46 GPa under quasi-hydrostatic condition.
机译:用同步辐射x射线衍射法测量了高达46GPa的粉末2H-MoTe2(P6(3)/mmc,并用基于第一性原理的密度泛函理论分析探讨了低压区的等结构跃迁和高压区的两种Lifshitz型电子拓扑跃迁(ETT)。类似于7GPa的低压等结构转变与晶格参数比c/a异常和各层压缩性的变化有关。通过将Birch-Murnaghan状态方程线性化为欧拉应变的函数,体积的压力依赖性表明,在类似于20 GPa的ETT压力下,体积模量发生了明显的变化。32 GPa左右的最小c/a比与标记为Lifshitz型第二ETT的电子袋拓扑结构的变化有关。在准静水压条件下,我们没有观察到任何结构转变,直至达到类似于46 GPa的最大施加压力。

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