首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Mechanism of non-catalytic chemical vapor deposition growth of all-inorganic CsPbX3 (X = Br, Cl) nanowires
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Mechanism of non-catalytic chemical vapor deposition growth of all-inorganic CsPbX3 (X = Br, Cl) nanowires

机译:全无机CSPBX3(X = BR,CL)纳米线的非催化化学气相沉积生长机理

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The growth of high-quality nanostructures using chemical vapor deposition (CVD) normally requires metal catalysts, which when incorporated in the nanostructures may severely affect their properties. Here, we report on the non-catalytic CVD growth of all-inorganic CsPbX3 (X = Br, Cl) perovskite nanowires (NWs) with an emphasis on understanding the growth mechanism via detailed electron microscopy and spectroscopic studies at different stages of the growth. We show that the chemical vapors initiate the nucleation and growth of halide nanoparticles, followed by structural transformations through axial elongation into nano-capsules and dumbbells, and eventually these dumbbells meet and form complete NWs. This growth mechanism is independent of the substrate crystallinity and detailed spectroscopic measurements demonstrate that nanoscale features at different growth stages have similar material properties as the final NWs. We believe that this self-assembly mechanism can be extended to understand the evolution of nanostructures in other semiconductor materials and to tune their characteristics to enhance their functionalities for novel optoelectronic devices.
机译:使用化学气相沉积(CVD)生长高质量的纳米结构通常需要金属催化剂,当金属催化剂加入到纳米结构中时,可能会严重影响其性能。在这里,我们报告了所有无机CsPbX3(X=Br,Cl)钙钛矿纳米线(NW)的非催化CVD生长,重点是通过详细的电子显微镜和光谱研究,了解生长不同阶段的生长机制。我们发现,化学蒸汽引发卤化物纳米颗粒的成核和生长,然后通过轴向拉伸将其结构转变为纳米胶囊和哑铃,最终这些哑铃相遇并形成完整的NWs。这种生长机制与衬底结晶度无关,详细的光谱测量表明,不同生长阶段的纳米级特征与最终NWs具有相似的材料特性。我们相信,这种自组装机制可以扩展到理解其他半导体材料中纳米结构的演变,并调整其特性,以增强其在新型光电子器件中的功能。

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