Growth of Ge_(1-x)Sn_x Nanowires by Chemical Vapor Deposition via Vapor–Liquid–Solid Mechanism Using GeH_4 and SnCl_4

摘要

In this work we report on the elaboration and characterization of Ge_(1-x)Sn_xrnnanowires synthetized by chemical vapor deposition (CVD) via vapor–liquid–rnsolid (VLS) mechanism using GeH_4 and SnCl_4 as precursors. We haverninvestigated tin incorporation in Ge as a function of experimental growthrnconditions such as growth temperature and Sn precursor partial pressurern(P_(SnCl4)/P_(GeH4) ratio). We have demonstrated Ge_(1-x)Sn_x nanowires with Snrnincorporation around 1 at.% in the core with a thin Sn-rich shell with up torn10 at.% Sn well beyond the equilibrium solubility of Sn in bulk Ge.