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Nanoscale synthesis of ionic analogues of bilayer silicene with high carrier mobility

机译:纳米级合成双层硅离子硅基二型离子迁移率

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摘要

Design of materials with special properties benefits from establishing deep structural and electronic analogies between emerging and existing materials. The Zintl anion [Al2Si2](2-) is both isostructural and isoelectronic to bilayer silicene; it thus makes a promising building block to assemble electronic materials. Here, we show that nanoscale films of SrAl2Si2, a semimetal formed by alternating [Al2Si2] and Sr layers, exhibit a high carrier mobility, exceeding 10 000 cm(2) V-1 s(-1). The dominant role of the anionic bilayers in the electronic structure and transport properties is established by band structure calculations. To synthesize monocrystalline epitaxial films of SrAl2Si2 with atomically sharp interfaces, a general two-step route involving a sacrificial 2D template is devised. A distinct advantage of the films is their natural integration with silicon technology. The results establish a platform for engineering layered ionic nanomaterials.
机译:具有特殊性能的材料的设计得益于在新兴材料和现有材料之间建立深层结构和电子类比。Zintl阴离子[Al2Si2](2-)与双层硅烯同构且等电子;因此,它是组装电子材料的一个很有前途的构件。在这里,我们展示了SrAl2Si2的纳米级薄膜,一种由[Al2Si2]和Sr层交替形成的半金属,展示了高载流子迁移率,超过10000 cm(2)V-1 s(-1)。通过能带结构计算确定了阴离子双层膜在电子结构和输运性质中的主导作用。为了制备具有原子尖锐界面的SrAl2Si2单晶外延膜,设计了一种包含牺牲2D模板的通用两步法。这种薄膜的一个显著优势是与硅技术的自然结合。研究结果为层状离子纳米材料的工程化奠定了基础。

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