First-principles calculation of intrinsic carrier mobility of silicene

摘要

The intrinsic carrier mobility of silicene is calculated using first-principles methods incorporating density functional theory, Boltzman transport equation, and the deformation potential theory. The electron mobility is 2.57 × 10~5 cm~2V~(-1)s~(-1) and the hole mobility is 2.22 × 10~5 cm~2V~(-1)s~(-1) at room temperature, which is smaller than that of graphene but still very high.