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首页> 外文期刊>Journal of Electronic Materials >Inter-relationship of the Structural Properties of Quaternary Chalcogenides CuZn_2Ga(S/Se)_4: A First-Principles Study
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Inter-relationship of the Structural Properties of Quaternary Chalcogenides CuZn_2Ga(S/Se)_4: A First-Principles Study

机译:季硫胺基化物结构性质的间相互关系CUZN_2GA(S / SE)_4:一项第一原理研究

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Quaternary chalcogenides based on stannite I-II_2-III-VI_4 structure are the best potential candidates to overcome the current generation of solar harvesting materials. First-principles electronic structure simulations were performed on semiconducting CuZn_2Ga(S/Se)_4 (CZGS/Se) to understand the inter-relationship of the structural properties. These structures contain a cubic close packing (ccp) array of S/Se-centered tetrahedrons, coordinated by one Cu, two Zn and one Ga atom occupying one half of the ccp tetrahedral voids. The remarkable variations in the crystal structures are explained by the influence of ionic radii of various atoms. The electronic and optical properties calculated using hybrid functional (Heyd, Scuseria and Ernzerhof, HSE06) show a suitable band gap of 1.59 eV for CZGSe with high optical absorption. The current density and maximum upper limit of theoretical energy conversion efficiency (P(%)) of CZGSe is enhanced when compared to that of CZGS. Our results suggest that the stannite CZGSe structure could be a promising candidate for efficient earth-abundant thin-film solar cell applications.
机译:以锡铅矿I-II_2-III-VI_4结构为基础的四元硫属化合物是克服当前太阳能收集材料的最佳候选材料。对半导体CuZn_2Ga(S/Se)4(CZGS/Se)进行了第一性原理电子结构模拟,以了解结构性质之间的相互关系。这些结构包含以S/Se为中心的四面体的立方密排(ccp)阵列,由占据ccp四面体空穴一半的一个Cu、两个Zn和一个Ga原子协调。晶体结构的显著变化可以用不同原子的离子半径的影响来解释。使用混合泛函(Heyd、Scuseria和Ernzerhof,HSE06)计算的电子和光学性质表明,对于具有高光吸收的CZGSe,合适的带隙为1.59 eV。与CZGS相比,CZGSe的电流密度和理论能量转换效率的最大上限(P(%)有所提高。我们的研究结果表明,锡石CZGSe结构可能是一种有希望的高效富于地球的薄膜太阳能电池应用的候选者。

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