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Structural, electronic and optical properties of Ag_2MgSn(S/Se)_4 quaternary chalcogenides as solar cell absorber layer: An Ab-initio study

机译:AG_2MGSN(S / SE)_4季硫胺化物的结构,电子和光学性质作为太阳能电池吸收层:AB-Initio研究

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摘要

In this work, generalized gradient approximation (GGA) and the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional within the framework of density functional theory (DFT) are used to investigate the structural, electronic and optical properties of Ag2MgSn(S/Se)(4) quaternary chalcogenides in kesterite and stannite phases. The kesterite and stannite phases of Ag2MgSn(S/Se)(4) are optimized and the values of lattice constants are calculated. The predicted energy bandgaps are found to be direct in nature along the Gamma direction, with highest bandgap energy of less than 1.64 eV for Ag2MgSnS4 in kesterite phase. The total and partial density of states are analysed in detail. The optical properties such as imaginary and real parts of dielectric function, refractive index, reflectivity and extinction coefficient are also discussed. Further, in order to understand the light trapping capacity, we examine the absorption coefficients of Ag2MgSnS4 and Ag2MgSnSe4 materials and explore their applicability as solar cell absorber layers. The predicted values of all parameters will help researchers to carry out further investigations on these materials for photovoltaic applications.
机译:在这项工作中,使用密度函数理论(DFT)框架内的广义梯度近似(GGA)和Heyd-Scuseria-Ernzerhof(Heyd-Scuseria-Ernzerhof(HESE)混合功能用于研究Ag2mgsn(SE / SE)的结构,电子和光学性质(4)季酮酸盐和斯坦石阶段的季硫胺化物。优化Ag2MgSN(S / SE)(S / SE)(4)的kEtterite和休闲型相,计算晶格常数的值。发现预测的能量带盖沿γ方向直接直接,具有克塞特矿石阶段的Ag2mgsns4的最高带隙能量小于1.64eV。详细分析了各国的总密度和部分密度。还讨论了诸如介电函数,折射率,反射率和消光系数的虚部和实影和实体部分的光学性质。此外,为了理解光捕获能力,我们检查Ag2Mgsns4和Ag2mgsnse4材料的吸收系数,并探讨它们作为太阳能电池吸收层的适用性。所有参数的预测值将有助于研究人员对这些用于光伏应用的材料进行进一步的研究。

著录项

  • 来源
    《Solar Energy》 |2020年第10期|206-213|共8页
  • 作者单位

    Natl Inst Technol Silchar Dept Elect & Commun Engn Solar Cell Fabricat Lab Silchar 788010 Assam India;

    Natl Inst Technol Silchar Dept Elect & Commun Engn Solar Cell Fabricat Lab Silchar 788010 Assam India;

    Natl Inst Technol Silchar Dept Elect & Commun Engn Solar Cell Fabricat Lab Silchar 788010 Assam India;

    Natl Inst Technol Silchar Dept Elect & Commun Engn Solar Cell Fabricat Lab Silchar 788010 Assam India;

    Univ Kebangsaan Malaysia Inst Microengn & Nanoelect IMEN Bangi 43600 Selangor Malaysia;

    Natl Univ Singapore Solar Energy Res Inst Singapore Singapore 117574 Singapore;

    Natl Univ Singapore Solar Energy Res Inst Singapore Singapore 117574 Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Chalcogenide materials; DFT calculation; Electronic structure; Optical properties; Solar cells;

    机译:硫属化物材料;DFT计算;电子结构;光学性质;太阳能电池;
  • 入库时间 2022-08-18 21:17:52

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