Investigation of beta-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

摘要

In this paper,beta-Ga2O3 films were grown on epi-GaN/sapphire (0001) substrates at 600,700 and 800 degrees C by low pressure MOCVD, respectively.And the influences of temperature on the crystal structure, surface morphology and element chemical state were investigated.XRD analysis found that beta-Ga2O3 films were preferentially grown along the (-201) crystal plane, and crystal quality of the films improved with increasing temperature.AFM and SEM indicated that the surface morphology of films was obviously changed with the increasing temperature, and the surface became compact and flat.The FWHM value of XRD rocking curve at 800 degrees C less than those grown at 600 and 700 degrees C, indicating that the beta-Ga2O3 film grown at 800 degrees C has better crystal quality.XPS showed that the intensity of the Ga 2p, Ga 3d and O 1s peaks increased with temperature, and epitaxial relationship of beta-Ga2O3 was confirmed by HRTEM, consistent with the XRD results. (C) 2020 Elsevier B.V. All rights reserved.