Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

摘要

We report on the successful growth of non-polar a-plane p-type Mg-doped AlGaN epi-layers with various Al compositions by metal organic chemical vapor deposition (MOCVD). The p-AlGaN epi-layers with the Al composition varied from 0 to 0.41 were studied comprehensively. In particular, a novel MOCVD growth process featured with pulsed mass flow supply (PMFS) of the metal organic-source was applied for the fabrication of the Mg-doped AlGaN with various Al compositions. It was revealed that a significant enhancement in electrical conductivity was induced owing to the application of the newly-developed PMFS technique during the growth of the Mg-doped AlGaN. In fact, a hole concentration up to 7.0 x 10(16) cm(-3) was realized for the p-Al0.41Ga0.59N epi-layer sample grown with the PMFS technique. (C) 2021 Elsevier B.V. All rights reserved.