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'Gate Effect' in p-Synephrine Electrochemical Sensing with a Molecularly Imprinted Polymer and Redox Probes

机译:具有分子印迹聚合物和氧化还原探针的P-兴腺电化学感测的“浇口效应”

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The "gate effect" mechanism for conductive molecularly imprinted polymer (MIP) film coated electrodes was investigated in detail. It was demonstrated that the decrease of the DPV signal for the Fe(CN)(6)(4-)/Fe(CN)(6)(3-) redox probe with the increase of the p-synephrine target analyte concentration in solution at the polythiophene MIP-film coated electrode did not originate from swelling or shrinking of the MIP film, as it was previously postulated, but from changes in the electrochemical process kinetics. The MIP-film coated electrode was examined with cyclic voltammetry (CV), differential pulse voltammetry (DPV), electrochemical impedance spectroscopy (EIS), and surface plasmon resonance (SPR). The MIP-film thickness in the absence and in the presence of the p-synephrine analyte was examined with in situ AFM imaging. Moreover, it was demonstrated that doping of the MIP film was not affected by p-synephrine binding in MIP-film molecular cavities. It was concluded that the "gate effect" was most likely caused by changes in radical cation (polaron) mobility in the film.
机译:详细研究了导电分子印迹聚合物(MIP)膜涂覆电极的“栅极效应”机构。据证明,Fe(CN)(6)(4-)/ Fe(4 - )/ Fe(CN)(6)(3)氧化还原探针的DPV信号的降低随溶液中的P-辛维林靶分析物浓度的增加在聚噻吩壁膜涂覆电极上不源于壁膜的溶胀或收缩,因为它先前假设,而是从电化学过程动力学的变化。用循环伏安法(CV),差分脉冲伏安法(DPV),电化学阻抗谱(EIS)和表面等离子体共振(SPR)检查壁膜涂覆电极。在不存在和存在p-兴腺分析物的情况下,用原位AFM成像检查MIP膜厚度。此外,证明夹层膜的掺杂不受麦皮膜分子腔中的p-兴奋剂结合的影响。结论是,“栅极效应”最有可能由薄膜中的自由基阳离子(PolarOn)迁移率的变化引起的。

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