Hybrid WSe2-In2O3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents

摘要

Photodetectors based on low-dimensional materials have attracted tremendous attention because of their high sensitivity and compatibility with conventional semiconductor technology. However, up until now, developing low -dimensional phototransistors with high responsivity and low dark currents over broad-band spectra still remains a great challenge because of the trade-offs in the potential architectures. In this work, we report a hybrid phototransistor consisting of a single In2O3 nano-wire as the channel material and a multilayer WSe2 nanosheet as the decorating sensitizer for photodetection. Our devices show high responsivities of 7.5 X 10(5) and 3.5 X 10(4) A W-1 and ultrahigh detectivities of 4.17 X 10(17) and 1.95 X 10(16) jones at the wavelengths of.153I,and 940 am, respectively. The superior detectivity of the hybrid architecture arises from the extremely low dark currents arid the enhanced photogating effect in the depletion regime by the unique design of energy band alignment of the channel and sensitizer materials. Moreover, the visible to near -infrared absorption properties of the multilayer WSe2 nanosheet favor a broad -band" spectral response for the devices. Our results pave the way for developing ultrahigh-sensitivity photodetectors based on low-dirriensional hybrid architectures.