Scalable, High-Performance Printed InOx Transistors Enabled by Ultraviolet-Annealed Printed High-k AlOx Gate Dielectrics

摘要

Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the integration of UV-annealing with inkjet printing, demonstrating how UV-annealing of high-k AlOx dielectrics facilitates the fabrication of high-performance InOx transistors at low processing temperatures and improves bias-stress stability of devices with all-printed dielectrics, semiconductors, and source/drain electrodes. First, the influence of UV-annealing on printed metal insulator metal capacitors is explored, illustrating the effects of UV-annealing on the electrical, chemical, and morphological properties of the printed gate dielectrics. Utilizing these dielectrics, printed InOx transistors were fabricated which achieved exceptional performance at low process temperatures (250 degrees C), with linear mobility mu(lin) approximate to 12 +/- 1.6 cm(2)/V s, subthreshold slope 150 mV/dec, I-on/I-off 10(7), and minimal hysteresis (50 mV). Importantly, detailed characterization of these UV-annealed printed devices reveals enhanced operational stability, with reduced threshold voltage (V-t) shifts and more stable on-current. This work highlights a unique, synergistic interaction between low-temperature-processed high-k dielectrics and printed metal oxide semiconductors.