机译:静态磁场对Ingazno薄膜晶体管低温制造的影响
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
Yonsei Univ Sch Elect &
Elect Engn 50 Yonsei Ro Seoul 03722 South Korea;
oxygen vacancy; ferromagnetism; InGaZnO; flexible thin-film transistor; static and rotating magnetic field; magnetic moment;
机译:静态磁场对Ingazno薄膜晶体管低温制造的影响
机译:双介电氢扩散阻挡层对低温处理的透明InGaZnO薄膜晶体管性能的影响
机译:低温工艺制备的低压InGaZnO离子敏感薄膜晶体管
机译:溶液处理的InGaZnO薄膜晶体管的低温制备
机译:静态和旋转磁场对硅锗单晶液相扩散生长影响的数值模拟研究
机译:具有稳健的Zn-O薄膜晶体管双层异质结构设计和低温制造工艺使用真空和溶液沉积层
机译:低温,高性能Ingazno薄膜晶体管,由电容耦合等离子体辅助磁控溅射制造