Electrostatic Control of Insulator-Metal Transition in La-doped SrSnO3 Films

摘要

We investigate the ion gel gating of wide bandgap oxide, La-doped SrSnO3 films grown using radical-based molecular beam epitaxy. An applied positive bias resulted in a reversible electrostatic control of sheet resistance over 3 orders of magnitude at low temperature driving sample from Mott variable range hopping to a weakly localized transport. Analysis of low temperature transport behavior revealed electron-electron interaction and weak localization effects to be the dominant scattering mechanisms. A large voltage window (-4 V <= V-g <= +4 V) was obtained for reversible electrostatic doping of SrSnO3 films showing robustness of stannate with regards to redox chemistry with electrolyte gating irrespective of the bias type.