首页> 外文期刊>ACS applied materials & interfaces >Energy-Efficient Artificial Synapses Based on Oxide Tunnel Junctions
【24h】

Energy-Efficient Artificial Synapses Based on Oxide Tunnel Junctions

机译:基于氧化物隧道结的节能人工突触

获取原文
获取原文并翻译 | 示例
           

摘要

The development of artificial synapses has enabled the establishment of brain-inspired computing systems, which provides a promising approach for overcoming the inherent limitations of current computer systems. The two-terminal memristors that faithfully mimic the function of biological synapses have intensive prospects in the neural network field. Here, we propose a high-performance artificial synapse based on oxide tunnel junctions with oxygen vacancy migration. Both short-term and long-term plasticities are mimicked in one device. The oxygen vacancy migration through oxide ultrathin films is utilized to manipulate long-term plasticity. Essential synaptic functions, such as paired pulse facilitation, post-tetanic potentiation, as well as spike-timing-dependent plasticity, are successfully implemented in one device by finely modifying the shape of the pre- and postsynaptic spikes. Ultralow femtojoule energy consumption comparable to that of the human brain indicates its potential application in efficient neuromorphic computing. Oxide tunnel junctions proposed in this work provide an alternative approach for realizing energy-efficient brain-like chips.
机译:人工突触的发展使得建立脑激发的计算系统,这提供了一种克服当前计算机系统的固有局限的有希望的方法。忠实地模仿生物突触功能的双终端留念在神经网络领域具有强化前景。在这里,我们提出了一种基于氧化隧道结的高性能人工突触,其具有氧气空位迁移。短期和长期可塑性都在一个设备中模仿。通过氧化物超薄膜迁移的氧空穴迁移用于操纵长期可塑性。基本突触函数,例如成对脉冲促进,后塔静脉促进,以及尖峰定时依赖性可塑性,通过精细修改预先修改前后峰值和突触尖峰的形状,在一个设备中成功地实现。与人脑相当的UltraLow Femtojoule能量消耗表明其在有效的神经形态计算中的潜在应用。本作工作中提出的氧化物隧道交叉点提供了实现节能脑芯片的替代方法。

著录项

  • 来源
    《ACS applied materials & interfaces》 |2019年第46期|共7页
  • 作者单位

    Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences;

    Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences;

    Department of Electrical and Computer Engineering University of Illinois;

    School of Physical Engineering Zhengzhou University;

    Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences;

    Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences;

    Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences;

    Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences;

    Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    artificial synapses; oxide tunnel junction; synaptic plasticity; oxygen vacancy; pulsed laser deposition;

    机译:人造突触;氧化物隧道结;突触塑性;氧气空位;脉冲激光沉积;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号