Unraveling the Impacts Induced by Organic and Inorganic Hole Transport Layers in Inverted Halide Perovskite Solar Cells

摘要

The carrier transport layers (CTLs) have exhibited the influence on performance and stability of halide perovskite solar cells (HaPSCs). The exploration of characteristic impacts on HaPSCs induced by the CTL unveils the key factors underlying the device physics. In this work, we investigate the impacts of the organic or inorganic hole transport layer (HTL) in HaPSCs by analyzing the elemental distribution, the current-voltage characteristics, and the capacitance spectroscopy. The organic HTL device shows the lower activation energy (E-A E-g) indicating a dominant interface-mediated recombination. The defect analysis reveals that the device with the inorganic HTL induces rather deep antisite defects with slightly higher trap densities. This is attributed to the diffusion of metal cations into the halide perovskite (HaP) during crystallization of HaP layer grown on the inorganic HTLs. Our results suggest that the passivation of deep defect and suppression of trap densities in the HaP either using ideal CTLs or optimizing the fabrication route is crucial to improving the device parameters approaching the theoretical limit.