机译:定制的2D / 3D卤化卤化物质异常接口,用于电阻电阻开关存储器的基本上增强的耐久性
Sungkyunkwan Univ Sch Adv Mat Sci &
Engn Suwon 16419 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 08826 South Korea;
Sejong Univ Dept Nanotechnol &
Adv Mat Engn Seoul 05006 South Korea;
Sungkyunkwan Univ Sch Adv Mat Sci &
Engn Suwon 16419 South Korea;
Sungkyunkwan Univ Sch Adv Mat Sci &
Engn Suwon 16419 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 08826 South Korea;
Sungkyunkwan Univ Dept Energy Sci Suwon 16419 South Korea;
Sungkyunkwan Univ Sch Adv Mat Sci &
Engn Suwon 16419 South Korea;
Seoul Natl Univ Dept Mat Sci &
Engn Seoul 08826 South Korea;
Sungkyunkwan Univ Sch Adv Mat Sci &
Engn Suwon 16419 South Korea;
halide perovskites; resistive switching; endurance; filament rupture; 2D/3D heterointerface;
机译:定制的2D / 3D卤化卤化物质异常接口,用于电阻电阻开关存储器的基本上增强的耐久性
机译:增强的耐力耐卤素卤化物钙钛矿电阻切换存储器在极低的弯曲半径下可操作
机译:通过组装2D / 3D Perovskite异质结构来提高CH3NH3PBI3-XCLX电阻开关存储器的性能
机译:通过新的脉冲方法提高价态变化的电阻开关记忆(VCM)的均匀性和耐力
机译:用于光伏和其他能量技术的2D和3D铅卤化卤化铅的合成,应用和转换
机译:Au / ZnO / Au电阻记忆的电阻切换:导电桥形成的原位观察
机译:定制的2D / 3D卤化物钙钛矿外才用越面,用于电阻电阻切换存储器的大致增强耐久性