NON-VOLATILE RESISTIVE-SWITCHING MEMORY CONTAINING HALIDE PEROVSKITE MATERIAL AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a resistive-switching memory containing a positive electrode, a negative electrode and a resistive switching layer provided between the positive electrode and the negative electrode, the resistance of which is switched by an applied voltage, wherein the resistive switching layer contains a compound of the chemical formula (A′)₂A_n−1B_nX_3n+1,whereinA′ is an ammonium ion having an asymmetric structure and containing a phenyl group, A is a monovalent metal ion and X is a halogen ion,the A′ has an asymmetric ion distribution which may be rotated by an applied electric field, andn is a value between 1 and ∞.