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机译:揭示垂直石墨烯/ H-BN / AU VAN DER WALAS的热载体分布,用于高性能光电探测器的异质结构
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
Korea Elect Technol Inst Seongnam 13509 South Korea;
Inst Basic Sci IBS Ctr Integrated Nanostruct Phys Suwon 16419 South Korea;
Sungkyunkwan Univ Dept Elect &
Comp Engn Suwon 16419 South Korea;
graphene; h-BN; 2D material; photodetector; hot carrier; tunneling;
机译:揭示垂直石墨烯/ H-BN / AU VAN DER WALAS的热载体分布,用于高性能光电探测器的异质结构
机译:基于石墨烯-MOTE2-石墨烯垂直范德瓦尔斯异质结构的超声敏感近红外光电探测器
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机译:h-BN-石墨烯-h-BN中的1 / f电子噪声和h-BN-TaSe 3 van der Waals异质结构中的高击穿电流密度。
机译:分子束外延法原位外延生长石墨烯/ h-BN范德华异质结构
机译:石墨烯/ H-BN / ZnO范德瓦尔斯隧道异质结构基紫外光探测器