机译:基于双功能NBS2的横向和垂直电子设备的不对称异质结构
Tsinghua Univ Sch Mat Sci &
Engn State Key Lab New Ceram &
Fine Proc Beijing 100084 Peoples R China;
Tsinghua Univ Sch Mat Sci &
Engn State Key Lab New Ceram &
Fine Proc Beijing 100084 Peoples R China;
Tsinghua Univ Sch Mat Sci &
Engn State Key Lab New Ceram &
Fine Proc Beijing 100084 Peoples R China;
Tsinghua Univ Sch Mat Sci &
Engn State Key Lab New Ceram &
Fine Proc Beijing 100084 Peoples R China;
Tsinghua Univ Sch Mat Sci &
Engn State Key Lab New Ceram &
Fine Proc Beijing 100084 Peoples R China;
Tsinghua Univ Dept Phys Beijing 100084 Peoples R China;
Beijing Univ Technol Fac Informat Technol Sch Microelect Beijing 100124 Peoples R China;
Tsinghua Univ Dept Phys Beijing 100084 Peoples R China;
Tsinghua Univ Dept Phys Beijing 100084 Peoples R China;
Tsinghua Univ Sch Mat Sci &
Engn State Key Lab New Ceram &
Fine Proc Beijing 100084 Peoples R China;
epitaxial growth; niobium disulfide; heterostructure; native oxide; electronic device;
机译:基于双功能NBS2的横向和垂直电子设备的不对称异质结构
机译:CRS2的不同电子和磁性,使应变控制的2D横向异质结构旋转式装置
机译:来自过渡金属二硫代根苷旁的横向异质结构的1D P-n结电子器件通过单盆化学气相沉积合成
机译:基于超高速异性结构纳米电子设备的可靠性标准,设计无线电电子系统的最佳空间用途
机译:甘油基纳米线异质结构的选择性区域外星应用在光子和电子器件中的应用
机译:作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
机译:作为后CMOS器件,基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
机译:siC离散功率器件 - 平面6H-siCaCCUFET的分析和优化;平面横向沟道siC垂直高功率JFET;平面横向通道mEsFET-a新型siC垂直功率器件;通过热壁化学气相沉积Chara生长