High-Frequency Elastic Coupling at the Interface of van der Waals Nanolayers Imaged by Picosecond Ultrasonics

摘要

Although the topography of van de Waals (vdW) layers and heterostructures can be imaged by scanning probe microscopy, high-frequency interface elastic properties are more difficult to assess. These can influence the stability, reliability, and performance of electronic devices that require uniform layers and interfaces. Here, we use picosecond ultrasonics to image these properties in vdW layers and heterostructures based on well-known exfoliable materials, i.e., InSe, hBN, and graphene. We reveal a strong, uniform elastic coupling between vdW layers over a wide range of frequencies of up to tens of gigahertz (GHz) and in-plane areas of 100 mu m(2). In contrast, the vdW layers can be weakly coupled to their supporting substrate, behaving effectively as free-standing membranes. Our data and analysis demonstrate that picosecond ultrasonics offers opportunities to probe the high-frequency elastic coupling of vdW nanolayers and image both "perfect" and "broken" interfaces between different materials over a wide frequency range, as required for future scientific and technological developments.