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首页> 外文期刊>CERAMICS INTERNATIONAL >Potentiostatic deposition of nickel cobalt sulfide nanosheet arrays as binder-free electrode for high-performance pseudocapacitor
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Potentiostatic deposition of nickel cobalt sulfide nanosheet arrays as binder-free electrode for high-performance pseudocapacitor

机译:镍钴硫化物纳米片阵列的电位沉积作为高性能假偶联机的无粘合剂电极

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摘要

To promote the development of supercapacitors, it is urgent to develop new class of electrode materials with low cost, high energy density and high power density. Ternary metal sulfides are one kind of promising electrode materials for high-performance energy storage devices. Here, a facile one-step potentiostatic deposition method is utilized to produce a binder-free, nanostructured NiCo2S4 electrode on FTO substrates. By controlling the Ni/Co mole ratio of the electrodepositing solution, the nanosheet-like NiCo2S4 free-standing electrode fabricated in the optimized condition exhibits a high specific capacitance of 1080 F g(-1) at a current density of 1 A g(-1). After 2000 cycles at 5 A g(-1), there is no loss of specific capacitance, which is ascribed to the unique structure of the nanosheet arrays. These results reveal that this method can be used as a facile route to synthesize free-standing NiCo2S4 nanosheets-based electrode material of supercapacitors.
机译:为了促进超级电容器的发展,迫切需要开发新的电极材料,具有低成本,高能量密度和高功率密度。 三元金属硫化物是用于高性能储能装置的一种有希望的电极材料。 这里,用于在FTO基板上使用容易的一步电位沉积方法来生产无粘合剂的纳米结构的NicO2S4电极。 通过控制电沉积溶液的Ni / Co摩尔比,在优化条件下制造的纳米片状的NicO2S4独立电极在1080V(-1)的电流密度为1A( - 1)。 在5A G(-1)的2000次循环之后,没有损失特定电容,其归因于纳米片阵列的独特结构。 这些结果表明,该方法可用作合成超级电容器的独立NiCO2S4纳米电极材料的容易途径。

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