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Fracture behavior of diamond films deposited by DC arc plasma jet CVD

机译:DC电弧等离子体喷射CVD沉积金刚石薄膜的断裂行为

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摘要

In the present study, two types of diamond films with a diameter of 123 mm were deposited by DC arc plasma jet chemical vapor deposition (CVD) operating in the gas recycling mode. These two diamond films were found to possess peculiar grain family morphologies. The fracture strengths of the samples were 182.65 and 995.58 MPa, respectively. To investigate the possible reason for the large difference in the fracture strength between the samples, the surface and fracture morphologies of the two types of diamond films as well as their grain size were characterized. The results revealed that the sample with low fracture strength suffered from a typical intergranular fracture. Weak grain boundary, impurities distributed in the boundary, and low strength of diamond grains led to a decrease in the fracture strength. However, the sample with high fracture strength mainly suffered from transgranular fracture and the columnar grain exhibited numerous voids. Owing to the impact of twinning, the voids could be occupied, thus increasing the contact area between the adjacent grains. Moreover, large grain family on the growth side contained numerous small grains and twins. These small grains, twins on growth side along with the difference of stress on surfaces inhibit fracture strength from decreasing rapidly. All these features benefitted fracture strength. Moreover, when the sample was loaded, the tips located in the voids probably resulted in increase of risk of stress concentration, which might have led to initiation of crack origin and eventual fracture.
机译:在本研究中,通过在气回收模式下操作的DC电弧等离子体喷射化学气相沉积(CVD)沉积直径为123mm的两种类型的金刚石膜。发现这两种钻石薄膜具有特殊的谷物家族形态。样品的断裂强度分别为182.65和995.58MPa。为了研究样品之间的裂缝强度差异的较大差异的可能性,表征两种金刚石薄膜的表面和断裂形貌以及它们的晶粒尺寸。结果表明,具有低断裂强度的样品患有典型的晶间骨折。弱晶界,分布在边界中的杂质,金刚石颗粒的低强度导致断裂强度的降低。然而,具有高断裂强度的样品主要患有响囊骨折和柱状颗粒的斑点呈现多种空隙。由于孪生的影响,可以占用空隙,从而增加相邻晶粒之间的接触面积。此外,生长侧的大谷物家族含有众多小谷物和双胞胎。这些小颗粒,生长侧的双胞胎伴随着表面上应力的差异抑制了迅速降低的断裂强度。所有这些都具有有益的裂缝强度。此外,当加载样品时,位于空隙中的尖端可能导致应力浓度的风险增加,这可能导致裂缝起源和最终裂缝的启动。

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