Atomic layer deposition of pure In2O3 films for a temperature range of 200-300 degrees C using heteroleptic liquid In(DMAMP)(2)((OPr)-Pr-i) precursor

摘要

In2O3 films were deposited by atomic layer deposition (ALD) using a newly synthesized heteroleptic In precursor, In(DMAMP)(2)((OPr)-Pr-i), and O-3 at 150-300 degrees C. Self-limiting growth characteristics were exhibited for a wide ALD temperature range of 200-300 degrees C and growth rate of 0.029-0.033 nm/cycle. At a low temperature of 150 degrees C, the amorphous In2O3 film was deposited, while polycrystalline In2O3 films were achieved at 200-300 degrees C. The In2O3 films grown in this ALD temperature range had high densities of 7.0-7.2 g/cm(3), which are comparable to those of bulk In2O3. At all growth temperatures (150-300 degrees C), no carbon or nitrogen impurities were detected, suggesting high reactivity of the In(DMAMP)(2) ((OPr)-Pr-i) precursor. The ALD In2O3 films showed n-type electronic property with high electron concentrations of 1.6 x 10(20)-3.6 x 10(20)/cm(3) and a Hall mobility of 31-39 cm(2)/V.s.