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Optical, electrical and magnetic properties of copper doped electrodeposited MoO3 thin films

机译:铜掺杂电沉积MOO3薄膜的光学,电气和磁性性能

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Copper-doped MoO3 thin films were prepared via electrodeposition technique. The techniques adopted for investigating the structural, optical, electrical and magnetic properties of both undoped and copper-doped MoO3 thin films include X-ray diffractometry, UV-visible spectroscopy, four-point probe and vibrating sample magnetometry respectively. Nanocrystalline homogenous grains with polycrystalline orthorhombic (alpha-MoO3) nature were obtained. The optical plots recorded decreased band gap energy from 3.44 eV to 3.27 eV, magnetic studies showed ferromagnetic properties of the doped samples while the electrical study revealed the highest conductivity of 1.5 Omega cm(-1). Doping with Cu has the potentiality of increasing the conductivity of MoO3 thereby enhancing its application in photocells.
机译:通过电沉积技术制备铜掺杂的MOO3薄膜。 用于研究未掺杂和铜掺杂的MOO3薄膜的结构,光学,电和磁性的技术,包括X射线衍射法,UV可见光谱,四点探针和振动样品磁体。 获得纳米晶体均匀晶粒,具有多晶正面(α-Moo3)性质。 从3.44eV记录的光学曲线减少到3.27eV,磁性研究显示掺杂样品的铁磁性特性,而电气研究显示出1.5ωcm(-1)的最高导电性。 用Cu掺杂具有增加MOO3电导率的潜力,从而增强其在光电池中的应用。

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