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Insight into electronic structure and optical properties of Nb and F co-doped SnO2 with hybrid functional theoretical method

机译:用杂交功能理论法对Nb和F共掺杂SnO2的电子结构和光学性质的洞察

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Structural, electronic and optical properties of Nb and F co-doped SnO2 were mainly investigated using density functional theory (DFT). Hybrid density functional theory was employed to obtain band structure, density of states (DOS) and optical properties. The calculated lattice parameters of pure SnO2 by PBEsol functional (a = 4.774 angstrom and c = 3.218 angstrom) are in good agreement with experimental date (a = 4.742 angstrom and c = 3.206 angstrom). When co-doping with Nb&F, the length of octahedron (4.136 angstrom) closely matches with pure SnO2 (4.112 angstrom) in direction of perpendicular to the c-axis. The direct band gaps of 3.80 eV, 3.38 eV 3.63 eV, 3.23 eV, 3.06 eV have been obtained for pure, F, Nb, Nb&F and Nb&2F doped SnO2 respectively, and the dispersed conduction band after doping does not significantly affect the electron effective mass of the conduction band minimum (CBM). A study of band alignment shows the clearly increasing valence band maximum (VBM) and the slightly decreasing CBM occur after doping. Analyses of the charge density difference and Bader charge suggest that Sn-O bond shows covalent characteristic, but the degree of ionization decreases in following order: Nb > Nb&F > Nb&2F > SnO2 > F. In terms of optical properties after doping, the optical absorption side slightly red or blue shift, and the reflectivity in the visible spectrum is greatly low.
机译:使用密度泛函理论(DFT)研究了Nb和F共掺杂SnO2的结构,电子和光学性质。使用混合密度函数理论来获得带结构,状态密度(DOS)和光学性质。 PBESOL功能的纯SnO2的计算晶格参数(A = 4.774埃和C = 3.218埃)与实验日期吻合良好(A = 4.742埃和C = 3.206埃)。当与Nb&F共掺杂时,八面体(4.136埃)的长度与垂直于C轴的纯SnO2(4.112埃)与纯SnO2(4.112埃)匹配。 3.80eV,3.38eV 3.63eV,3.23eV,3.06eV,3.23eV,3.06eV分别用于分别获得3.23eV,3.06eV分别获得,掺杂后的分散传导不会显着影响电子有效质量导通带最小(CBM)。带对准的研究表明了掺杂后显然增加的价带最大(VBM)和略微降低的CBM发生。电荷密度差异和獾的分析表明SN-O键显示了共价特性,但电离程度按以下顺序减少:Nb> Nb&F> Nb&2F> SnO2> F.在掺杂后的光学性质方面,光学吸收略微红色或蓝色偏移,可见光谱中的反射率大大低。

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