首页> 外文期刊>CERAMICS INTERNATIONAL >Domain evolution and improved electrical property of BiMn2/3Nb1/3O3 doped 0.8Na(0.5)Bi(0.5)TiO(3)-0.2K(0.5)Bi(0.5)TiO(3)
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Domain evolution and improved electrical property of BiMn2/3Nb1/3O3 doped 0.8Na(0.5)Bi(0.5)TiO(3)-0.2K(0.5)Bi(0.5)TiO(3)

机译:BIMN2 / 3NB1 / 3O3掺杂0.8NA(0.5)BI(0.5)TiO(3)-0.2K(0.5)BI(0.5)TiO(0.5)TiO(0.5)TiO(0.5)TiO(0.5)TiO(0.5)TiO(0.5)TiO(0.5)TiO(0.5)TiO(3)

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摘要

(1-x)[0.8Na(0.5)Bi(0.5)TiO(3)-0.2K(0.5)Bi(0.5)TiO(3)]-xBiMn(2/3)Nb(1/3)O(3) ((1-x)NKBT-xBMN with x = 0-0.04) piezoceramics were prepared, the composition-dependent domain structure and domain switching under electric field and their effects on macroscopic electrical properties have been systematically investigated. At room temperature, though the ceramics persists rhombohedral-tetragonal mixed crystal structure, their domain structure evolves from dispersive island-like with average size of 80 nm for x = 0 to labyrinthian-like with average size of 120 nm for x = 0.0075, and then tends to be unobservable by forming polar nanoregions for x = 0.04. As the results, the x = 0.0075 ceramic shows enhanced ferroelectric and piezoelectric property. When compared with the x = 0 pristine counterpart, the saturated polarization, remnant polarization, piezoelectric coefficient, and electromechanical coupling factor of x = 0.0075 ceramic increase by 3%, 12%, 40%, and 20% to 43.2 mu C/cm(2), 31.21.mu C/cm(2), 147 pC/N, and 0.28. This work suggests that fine domain engineering is a promising way to further improve electrical property.
机译:(1-x)[0.8NA(0.5)Bi(0.5)TiO(3)-0.2K(0.5)Bi(0.5)TiO(3)] - Xbimn(2/3)Nb(1/3)O(3 )((1-x)具有x = 0-0.04的NKBT-XBMN)制备压电陶瓷,系统地研究了在电场下的组成依赖性结构域结构和域切换及其对宏观电性能的影响。在室温下,虽然陶瓷持续存在菱形 - 四方混合晶体结构,但它们的畴结构从分散岛状而从平均大小为80nm的分散岛,x = 0到迷宫状,平均尺寸为120nm,x = 0.0075,然后通过形成X = 0.04的极性纳米导致倾向于不可接受。结果,X = 0.0075陶瓷显示出增强的铁电和压电性能。与X = 0原始对应物相比,饱和偏振,残余偏振,压电系数和X = 0.0075陶瓷的机电耦合因子增加3%,12%,40%和20%至43.2μC/ cm( 2),31.21.mu c / cm(2),147 pc / n和0.28。这项工作表明,美域工程是进一步改善电产的有希望的方式。

著录项

  • 来源
    《CERAMICS INTERNATIONAL》 |2020年第6期|共7页
  • 作者单位

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Jiangsu Key Lab Artificial Funct Mat Coll Engn &

    Natl Lab Solid State Microstruct Dept Mat Sci &

    E Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Jiangsu Key Lab Artificial Funct Mat Coll Engn &

    Natl Lab Solid State Microstruct Dept Mat Sci &

    E Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Jiangsu Key Lab Artificial Funct Mat Coll Engn &

    Natl Lab Solid State Microstruct Dept Mat Sci &

    E Nanjing 210093 Peoples R China;

    Liaocheng Univ Coll Mat Sci &

    Engn Liaocheng 252059 Shandong Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Jiangsu Key Lab Artificial Funct Mat Coll Engn &

    Natl Lab Solid State Microstruct Dept Mat Sci &

    E Nanjing 210093 Peoples R China;

    Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Jiangsu Key Lab Artificial Funct Mat Coll Engn &

    Natl Lab Solid State Microstruct Dept Mat Sci &

    E Nanjing 210093 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 陶瓷工业;硅酸盐工业;
  • 关键词

    NKBT; Domain engineering; Electrical property;

    机译:NKBT;域工程;电性质;

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