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首页> 外文期刊>Analog Integrated Circuits and Signal Processing >A 98.1 % CE, 100 mA MLC multi-reference output all digital LDO with fast settling and digital self calibration for DVFS and multi-V-DD applications
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A 98.1 % CE, 100 mA MLC multi-reference output all digital LDO with fast settling and digital self calibration for DVFS and multi-V-DD applications

机译:具有98.1%CE,100 mA MLC多参考的全数字LDO输出,具有快速建立和针对DVFS和multi-V-DD应用的数字自校准

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摘要

This paper presents a Multiple Reference All Digital Low Dropout Regulator (MRADLDO) utilized 98.1 % current efficiency and 100 mA maximum load current. MRADLDO performs selectable different reference voltages to apply in the multi VDD core applications as well as Dynamic Voltage and Frequency Scaling issues. This improves control on delay, speed and power of the subject circuits. This structure has the fast response to variation in load or variation in selection voltages. Maximum required time for settling output, in the worst case, is less than 256 ns. Furthermore, a self calibration structure is embedded for the sake of decreasing the steady-state time. While changing the output voltage (V-out), reference voltage (V-ref) is been switched accrued, there is a parallel access to control unit data in order to load initial value for the LDO controller shift registers from a simple embedded memory. To show the effectiveness of the proposed design, it is applied on ARM1176JZF-S processor supply via producing four required levels of voltage as high level (HL)@ 1.21 V, medium level ML@ 1.14 V, low level LL@0.99 V and sleep mode SM@0 V. Likewise, a comparison between two proposed multi references LDO such as MRADLDO and analog multiplexer is utilized to illustrate the effectiveness of the proposed MRADLDO circuit.
机译:本文介绍了一种多参考全数字低压差稳压器(MRADLDO),利用了98.1%的电流效率和100 mA的最大负载电流。 MRADLDO执行可选的不同参考电压,以应用于多VDD内核应用以及动态电压和频率缩放问题。这改善了对主题电路的延迟,速度和功率的控制。这种结构对负载变化或选择电压变化具有快速响应。在最坏的情况下,稳定输出所需的最大时间少于256 ns。此外,为了减少稳态时间,嵌入了自校准结构。在更改输出电压(V-out)时,会产生参考电压(V-ref)的切换,可以并行访问控制单元数据,以便从简单的嵌入式存储器加载LDO控制器移位寄存器的初始值。为了展示所提出设计的有效性,将其应用于ARM1176JZF-S处理器电源,通过产生四个所需的电压电平:高电平(HL)@ 1.21 V,中电平ML @ 1.14 V,低电平LL@0.99 V和休眠同样,利用两个拟议的多参考LDO(例如MRADLDO和模拟多路复用器)之间的比较来说明拟议的MRADLDO电路的有效性。

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