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Reduced comparator high speed low power ADC using 90 nm CMOS technology

机译:使用90 nm CMOS技术的比较器高速低功耗ADC

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The increasing demand of high speed and low power ADC in serial links, gigabit ethernet, high speed instruments in general and communication technologies such as ultra wide band systems in particular has put tremendous pressure on efficient design of data converters. Presently flash ADC is the architecture of choice with sampling frequency ranging from 2 to 40 GS/s with 4-6 bit resolution, where speed and low resolution is required. However we are forced to compromise between performance and complexity when such ADC is used. In this paper a single channel high speed low power CMOS based 4-bit ADC using reduced comparator and multiplexer based architecture is presented. For improving the conversion rate, both the analog (comparator array) and the digital (encoder) parts of the proposed ADC are fully modified and the architecture uses only 4 comparators instead of 15 as used in conventional flash ADC, thereby saving considerable amount of power. The proposed 4-bit 2 GS/s ADC is designed and simulated in Tanner tools with 1.2 V supply voltage using 90 nm CMOS technology. HSpice simulation result of proposed architecture shows a power dissipation of 23 mW with INL and DNL errors between ±0.4 LSB and ±0.34 LSB respectively. ENOB and SNDR for the proposed architecture are 3.72 and 24.2 respectively.
机译:串行链路,千兆以太网,通用高速仪器以及通信技术(例如超宽带系统)对高速和低功耗ADC的需求不断增长,这给数据转换器的高效设计带来了巨大压力。目前,闪存ADC是首选架构,其采样频率范围为2至40 GS / s,分辨率为4-6位,在这种情况下需要速度和低分辨率。但是,当使用此类ADC时,我们不得不在性能和复杂性之间进行折衷。本文提出了一种使用简化的比较器和基于多路复用器的架构的基于单通道高速低功耗CMOS的4位ADC。为了提高转换速率,对所提议ADC的模拟(比较器阵列)和数字(编码器)部分都进行了完全修改,并且该架构仅使用4个比较器,而不是传统的Flash ADC中使用的15个,从而节省了大量功率。拟议的4位2 GS / s ADC是使用90 nm CMOS技术在Tanner工具中以1.2 V电源电压设计和仿真的。拟议架构的HSpice仿真结果显示功耗为23 mW,INL和DNL误差分别在±0.4 LSB和±0.34 LSB之间。提议的体系结构的ENOB和SNDR分别为3.72和24.2。

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