Design and realization of a built-in current sensor for I{sub}(DDQ) testing and power dissipation measurement

摘要

Built-in current sensor (BICS) is known to enhance test accuracy, defect coverage of quiescent current (I{sub}(DDQ)) testing method in CMOS VLSI circuits. For new deep-submicron technologies, BICSs become essential for accurate and practical I{sub}(DDQ) testing. This paper presents a new BICS suitable for power dissipation measurement and I{sub}(DDQ) testing. Although the BICS presented in this paper is dedicated to submicron technologies that require reduced supply voltage, it can also be used for applications and technologies requiring normal supply voltage. The proposed BICS has been extended for on-line measurement of the power dissipation using only an additional capacitor. Power dissipation measurement is important for safety-critical applications and battery-powered systems. A simple self-test approach to verify the functionality and accuracy of BICSs has also been introduced. The proposed BICS has been implemented and tested using an N-well CMOS 1.2 μm technology. Practical results demonstrate that a very good measurement accuracy can be achieved.