The model of successive double high-dose implantation

摘要

The model of successive double high-doseimplantation is proposed. The model based on themethod of consistent dose correction is taking intoaccount sputtering and target volume growth,diffusion redistribution of ions and theirdeceleration on recently implanted ions. Thecalculated profiles of carbon and nitrogen ionsimplanted into aluminum are in good accordance with experimental data.