A 90 nm Low Power 32K-Byte Embedded SRAM with Gate Leakage Suppression Circuit for Mobile Applications

摘要

In sub 100 nm generation, gate tunneling leak current increases and dominates total standby leak current of LSI based on decreasing gate oxide thickness. We propose reducing gate leak current in SRAM using Local DC Level Control (LDLC) and an Automatic Gate Leakage Suppression Driver (AGLSD) to reduce gate leak current in the peripheral circuit. We designed and fabricated a 32KB 1-port SRAM using 90 nm CMOS technology. Evaluation shows that the standby current of 32KB SRAM is 1.2 uA at 1,2 V and room temperature. It is reduced to 7.5% of conventional SRAM.