Selective area MOVPE technology for monolithic optical integrated circuits and its application to all-optical switching devices

摘要

Selective area growth (SAG) technology by metalorganic vapor phase epitaxy is remarkable since it may simplify the fabrication process for optical integrated circuits. We selectively grew some fundamental materials (InP, InGaAs, InGaAsP) for InP-based optical devices, and worked out the method for estimation of their compositions using measured growth rates. As one application of SAG to optical integrated circuits, we fabricated all-optical switches consisting of semiconductor optical amplifiers (SOAs) and Mach-Zehnder interferometer (MZI) by a single step epitaxy. Basic all-optical switching operation was successfully demonstrated.