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首页> 外文期刊>IEICE Transactions on Electronics >Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE
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Monolithically Integrated Mach-Zehnder Interferometer All-Optical Switches by Selective Area MOVPE

机译:单片集成马赫曾德尔干涉仪全光开关

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摘要

We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192 nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 π phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of π was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.
机译:我们通过带隙设计的MZI SOA全光开关实现了第一个动态全光信号处理。宽间隙选择区生长(SAG)技术用于提供具有单步外延的多带隙材料。在有源区和无源区之间获得的最大光致发光(PL)峰位移为192 nm。用制造的开关进行的静态电流开关表明大的载流子折射率变化;在SOA中注入60 mA电流可获得高达14π的相移。用于获得π相移的SOA的载流子恢复时间估计为250-300 ps。在2.5 Gbps全光波长转换中获得了清晰的眼图。这是第一个采用带隙工程PIC的全光波长转换演示,该PIC具有选择性区域生长或量子阱混合技术。

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