Current-voltage characteristics of Schottky and MIS diodes with nm-thin insulating layers

摘要

Operating speeds of compound semiconductor MESFETs have been improved by down-siging, increase of the channel donor densities, and introduction of high electron mobility materials. As a consequence, the tunnel leakage current of the Schottky junction emerged as a limiting factor of the improvenent. In this study, the current-voltage characteristics of Schottky and MIS diodes are theoretically and experimentally investigated, and dependence of the leakage currents on the donor densities and the inserted nm-thin insulating layers are clarified, Drain current vs. drain voltage curves of a fabricated GaAs MISFET, which has a nm-thick GaAs-oxide as the insulator, are also shown.