New process technologies for copper/low-k metallization - abrasive-free copper CMP (AFP) and new low-k material: methyl-silicon-oxycarbide (MTES)

摘要

A newly developed abrasive-free chemical agent significantly reduces erosion and dishing during copper polishing. As a result controllability of electrical resistance of copper wiring is improved and durability to electrical dielectric breakdown is made higher. A fluorine-free CVD low-k film was also developed. Its mechanical toughness makes it easier to fabricate a simple and reliable dielectric structure. The developed agent and low-k film provide low-parasitic-capacitance copper lines (down to 0.5 μm pitch) with smaller resistance deviation.