Oxygen incorporation in ZnTe thin films grown by plasma-assisted pulsed laser deposition

摘要

We studied oxygen incorporation into ZnTe thin films with nitrogen and oxygen plasma during a plasmaassisted pulsed laser deposition (PA-PLD). It was shown that ZnTe:O layer formed with oxygen plasma exhibits an enhancement of optical transparency in visible spectral region due to the formation of amorphous Te_Ox. Especially, the ZnTe:NO deposited by PA-PLD under nitrogen and oxygen partial pressures with N_2:O_2 of 10:3 sccm showed p-type semiconducting characteristics and the formation of intermediate band at about 0.5-0.8 eV below the ZnTe band edge. These results for oxygen incorporation in ZnTe thin film such as the enhancement of optical transparency in visible spectral region and the intermediate band formation will be useful for optoelectronic devices or intermediate band solar cells.