Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

摘要

The low pressure chemical vapor deposition (LP-CVD) of Al doped ZnO thin film was investigated for transparent electrode of thin film solar cell. For LP-CVD, diethylzinc and trimethylaluminum were used as Zn and Al precursors, respectively, while pure water was used as a reactant. Self-textured surface was obtained, resulting in the increase of haze factor reaching up to 35%. Based on the characterization of LP-CVD ZnO thin films, we fabricated the optimized superstrate p-i-n a-Si:H solar cell on glass substrate.