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Growth of SnO_2 nanowires by thermal evaporation on Au-coated Si substrates

机译:通过热蒸发在镀金的硅衬底上生长SnO_2纳米线

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摘要

Tin oxide (Sn02) nanowires have been grown on Au-coated Si substrates via a conventional thermal evap oration route using Sn powder. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy analyses have been performed to investigate the structure and PL properties of the products. The as-synthesized nanostructures have been found to have monocrystalline tetragonal rutile structure. The diameters and the lengths of the SnO_2 nanowires are in ranges of 50-550 nm and 200-500 um, respectively. The PL spectrum of the as-grown SnO_2 nanowires exhibited a broad emission band centered at around 595 nm and with a shoulder at around 555 nm in the yellow region. The growth mechanism of SnO_2 nanowires by thermal evaporation have also been discussed.
机译:氧化锡(SnO2)纳米线已经通过使用锡粉的常规热蒸发途径在镀金的硅基板上生长。已经进行了X射线衍射(XRD),场发射扫描电子显微镜(FESEM),透射电子显微镜(TEM)和光致发光(PL)光谱分析以研究产物的结构和PL性质。已发现合成后的纳米结构具有单晶四方金红石结构。 SnO_2纳米线的直径和长度分别在50-550nm和200-500μm的范围内。生长中的SnO_2纳米线的PL光谱在黄色区域中显示出一个宽的发射带,中心在595 nm左右,肩部在555 nm左右。还讨论了通过热蒸发生长SnO_2纳米线的机理。

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