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First-principles theoretical study of organic/metal interfaces: Vacuum level shifts and interface dipoles

机译:有机/金属界面的第一原理理论研究:真空能级转换和界面偶极子

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摘要

In this article, we discuss recent progress in theoretical studies on the electronic properties of organic/metal interfaces, especially on the origin of the interface dipoles. We first discuss the effect of the interface dipole on the charge injection barriers at organic/metal interfaces. Then, we observe the importance of the interface structure, especially of the organic-metal distances in physisorption systems. The experimentally observed substrate dependence of the interface dipole can be attributed mainly to the difference in the organic-metal distance. In the case of chemisorption systems, the induced density of interface states tends to pin the Fermi level relative to the HOMO and LUMO levels of molecules. We also point out an important role of van der Waals (vdW) interaction between organic molecules and metal substrates. Density functional theory (DFT) within a generalised gradient approximation (GGA) plus a recently proposed semi-empirical vdW correction can describe atomic geometries of organic/metal interfaces reasonably well.
机译:在本文中,我们讨论了有机/金属界面电子特性,特别是界面偶极子起源的理论研究的最新进展。我们首先讨论界面偶极子对有机/金属界面上的电荷注入势垒的影响。然后,我们观察了界面结构的重要性,尤其是物理吸附系统中有机金属距离的重要性。实验观察到的界面偶极子对衬底的依赖性主要归因于有机金属距离的差异。在化学吸附系统的情况下,相对于分子的HOMO和LUMO能级,界面态的感应密度趋于固定费米能级。我们还指出了有机分子与金属基底之间范德华(vdW)相互作用的重要作用。广义梯度近似(GGA)中的密度泛函理论(DFT)加上最近提出的半经验vdW校正可以合理地描述有机/金属界面的原子几何形状。

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