The effect of TiO{sub}2 underlayer on crystal structure and magnetic properties of hexagonal barium-ferrite (BaM) thin films

摘要

The BaM film and TiO{sub}2 underlayer were prepared on (100) oriented bare Si substrate by using a RF/DC magnetron sputtering. BaM/TiO{sub}2/Si thin films were crystallized at 750°C and 800°C by post-annealing. For most of BaM/TiO{sub}2/Si thin films the coercivity values of the film prepared at 750°C were higher than those of the film prepared at 800°C. High gas pressure was more effective for BaM/TiO{sub}2/Si thin film showing good magnetic properties. The dependence surface morphology on annealing temperature was confirmed in BaM/TiO{sub}2/Si film. Surface morphology was changed from elongated type grains to pop-corn type grains as increase in total gas pressure.