Lead Sulfide Nanocrystal Quantum Dot Solar Cells with Trenched ZnO Fabricated via Nanoimprinting

摘要

The improvement of power conversion efficiency, especially current density (J_(sc)), for nanocrystal quantum dot based heterojunction solar cells was realized by employing a trenched ZnO film fabricated using nanoimprint techniques. For an optimization of ZnO patterns, various patterned ZnO films were investigated using electrical and optical analysis methods by varying the line width, interpattern distance, pattern height, and residual layer. Analyzing the features of patterned ZnO films allowed us to simultaneously optimize both the pronounced electrical effects as well as optical properties. Consequently, we achieved an enhancement in (J_(sc)) from 7.82 to 12.5 mA cm~(-2) by adopting the patterned ZnO with optimized trenched shape.