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METHOD FOR FABRICATING QUANTUM DOT FILM AND METHOD FOR FABRICATING SOLAR CELL

机译:制造量子点膜的方法和制造太阳能电池的方法

摘要

The purpose of the present invention is to provide a method of manufacturing a quantum dot thin film, which can improve conductivity of a quantum dot thin film and facilitate adjustment of band energy. The method of the present invention comprises the steps of: removing a first ligand from a quantum dot by mixing a first solution including a III-V group compound and a non-polar solvent and the quantum dot combined with the first ligand including an alkyl chain with a second solution including a fluorine-containing compound and a polar solvent; separating the first ligand-removed quantum dot which has been moved to a polar solvent layer of a mixed solution of the first solution and the second solution from a phase-separated non-polar solvent layer; forming a preliminary thin film by coating a quantum dot ink including the first ligand-removed quantum dot on a substrate; and providing a ligand-forming material to the preliminary thin film, thereby bonding a second ligand to the surface of the quantum dot.
机译:本发明的目的是提供一种制造量子点薄膜的方法,该方法可以提高量子点薄膜的导电性并促进带能的调节。本发明的方法包括以下步骤:通过混合包括III-V族化合物和非极性溶剂的第一溶液,从量子点中去除第一配体,并且该量子点与包括烷基链的第一配体结合用第二溶液,所述第二溶液包含含氟化合物和极性溶剂;将已移至第一溶液和第二溶液的混合溶液的极性溶剂层中的第一去除配体的量子点与相分离的非极性溶剂层分离;通过将包括第一去除配体的量子点的量子点油墨涂覆在基板上形成初步薄膜;向初步薄膜提供配体形成材料,从而将第二配体结合到量子点的表面。

著录项

  • 公开/公告号KR102048884B1

    专利类型

  • 公开/公告日2019-11-26

    原文格式PDF

  • 申请/专利权人 KOREA INSTITUTE OF MACHINERY & MATERIALS;

    申请/专利号KR20180062003

  • 申请日2018-05-30

  • 分类号C09D5/24;C09D5/22;C09D7/20;C09K11/02;C09K11/62;H01L31/0216;H01L31/0304;H01L31/0445;H01L31/18;

  • 国家 KR

  • 入库时间 2022-08-21 11:08:26

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