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Fabrication and Temperature-Dependent Field-Emission Properties of Bundlelike VO2 Nanostructures

机译:束状VO2纳米结构的制备及随温度变化的场发射特性

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Bundlelike VO2(B) nanostructures were synthesized via a hydrothermal method, and VO2(M1/R) nanobundles were obtained after a heat-treatment process. Structural characterization shows that these nanobundles are self-assembled by VO2 nanowires, and VO2(M1/R) nanobundles have better crystallinity. Temperature-dependent field-emission (FE) measurement indicates that FE properties of these two phases of nanobundles can both be improved by increasing the ambient temperature. Moreover, for the VO2(M1/R) nanobun- dles, their FE properties are also strongly dependent on the temperature-induced metal—insulator transitions process. Compared with poor FE properties found in the insulating phase, FE properties were significantly improved by increasing the temperature, and about a three-orders-of-magnitude increasing of the emission current density has been observed at a fixed field of 6 V/μm. Work function measurement and density-functional theory calculations indicated that the decrease of work function with temperature is the main reason that caused the improvement of FE properties. These characteristics make VO2(M1/R) a candidate material for application of new type of temperature-controlled field emitters, whose emission density can be adjusted by ambient temperature.
机译:通过水热法合成了束状VO2(B)纳米结构,经过热处理后得到了VO2(M1 / R)纳米束。结构表征表明,这些纳米束是由VO2纳米线自组装的,并且VO2(M1 / R)纳米束具有更好的结晶度。温度相关的场发射(FE)测量表明,纳米束的这两相的FE特性都可以通过提高环境温度来改善。此外,对于VO2(M1 / R)纳米束,它们的FE特性也强烈依赖于温度诱导的金属-绝缘体转变过程。与绝缘相中发现的较差的FE特性相比,通过提高温度可以显着改善FE特性,并且在6 V /μm的固定磁场下观察到发射电流密度大约增加了三个数量级。功函数的测量和密度泛函理论计算表明,功函数随温度的下降是引起有限元性能改善的主要原因。这些特性使VO2(M1 / R)成为新型温控场发射器的候选材料,其发射密度可通过环境温度进行调节。

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